Time evolution of the density of states of tritiated hydrogenated amorphous silicon
Author:
Affiliation:
1. a Department of Electrical and Computer Engineering , University of Toronto , Toronto , Ontario M5S 3G4, Canada
2. b Ontario Hydro Technologies , Toronto , Ontario M8Z 5S4, Canada
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642810008209764
Reference26 articles.
1. The effect of light-soaking on the dc conductivity of a-Si:H
2. Defect Thermodynamics, Inhomogeneity, and the Density of Gap States in Hydrogenated Amorphous Silicon
3. Physics of the Meyer-Neldel Rule in Amorphous Silicon
4. Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect
5. The Staebler-Wronski Effect and the Thermal Equilibration of Defect and Carrier Concentrations
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1. Correlation of a-Si:H properties with hydrogen distribution;2010 35th IEEE Photovoltaic Specialists Conference;2010-06
2. Time evolution of charged defect states in tritiated amorphous silicon;Journal of Applied Physics;2007-11-15
3. Metastable defect creation in tritiated hydrogenated amorphous silicon and the Staebler–Wronski effect;Journal of Materials Science: Materials in Electronics;2007-03-20
4. Density of states in tritiated amorphous silicon obtained with the constant photocurrent method;Journal of Applied Physics;2005-11
5. Modeling of Beta Conductivity in Tritiated Amorphous Silicon;MRS Proceedings;2000
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