Deep states in nitrogen-doped p-ZnSe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367017
Reference20 articles.
1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
2. Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
3. p-type ZnSe grown by molecular beam epitaxy with remote microwave plasma of N2
4. Growth of P-type Znse by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide
5. Novel technique forp‐type nitrogen doped ZnSe epitaxial layers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optical characterization of native defects in ZnSe substrate;Physica B: Condensed Matter;2001-01
2. Photoluminescence and photoacoustic spectra of N-doped ZnSe epitaxial layers grown by molecular beam epitaxy;Journal of Crystal Growth;2000-06
3. Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beam epitaxy;Journal of Applied Physics;2000-01-15
4. Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy;Applied Physics Letters;1999-08-09
5. Interactions of intentionally diffused hydrogen with nitrogen acceptors and nitrogen related donor centers in molecular beam epitaxy grown ZnSe;Journal of Applied Physics;1999-08
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