Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124528
Reference12 articles.
1. Optimization of interface parameters and bulk properties in ZnSe‐GaAs heterostructures
2. Chemical bonding and electronic properties of Se‐rich ZnSe–GaAs(001) interfaces
3. Interface composition and stacking fault density in II-VI/III-V heterostructures
4. Effects of GaAs buffer layer and lattice-matching on deep levels in Zn(S)Se/GaAs heterostructures
5. Deep states in nitrogen-doped p-ZnSe
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