Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124528
Reference12 articles.
1. Optimization of interface parameters and bulk properties in ZnSe‐GaAs heterostructures
2. Chemical bonding and electronic properties of Se‐rich ZnSe–GaAs(001) interfaces
3. Interface composition and stacking fault density in II-VI/III-V heterostructures
4. Effects of GaAs buffer layer and lattice-matching on deep levels in Zn(S)Se/GaAs heterostructures
5. Deep states in nitrogen-doped p-ZnSe
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods;APL Materials;2024-09-01
2. Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies;Journal of Applied Physics;2018-10-14
3. Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces;ECS Journal of Solid State Science and Technology;2017
4. Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies;Journal of Applied Physics;2013-05-28
5. Emissive Interface States in Organic Light-Emitting Diodes Based on Tris(8-hydroxyquinoline) Aluminum;Japanese Journal of Applied Physics;2008-01-22
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3