Incorporation and stability of carbon during low-temperature epitaxial growth of Ge1−xCx (x<0.1) alloys on Si(100): Microstructural and Raman studies
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365636
Reference35 articles.
1. Silicon-based semiconductor heterostructures: column IV bandgap engineering
2. Silicon-based optoelectronics
3. Formation of β‐SiC nanocrystals by the relaxation of Si1−yCyrandom alloy layers
4. Strain compensated heterostructures in the Si1−x−yGexCy ternary system
5. Growth of heteroepitaxial Si1−x−yGexCy alloys on silicon using novel deposition chemistry
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