Determination of minority‐carrier lifetime and surface recombination velocity by optical‐beam‐induced‐current measurements at different light wavelengths-Reference-Cited by-同舟云学术

Determination of minority‐carrier lifetime and surface recombination velocity by optical‐beam‐induced‐current measurements at different light wavelengths

Published:1989-10 Issue:7 Volume:66 Page:3060-3065
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Flohr Th.,Helbig R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.344161

Reference9 articles.

1. Injected Current Carrier Transport in a Semi‐Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination Velocities

2. Theory of life time measurements with the scanning electron microscope: Steady state

3. A SEM-EBIC minority-carrier diffusion-length measurement technique

4. Electron‐beam‐induced currents collected by ap‐njunction of finite junction depth

5. Theory of lifetime measurements with the scanning electron microscope: Transient analysis

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