Stability of strained H:Si(105) and H:Ge(105) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2191735
Reference23 articles.
1. Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001)
2. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
3. Ge growth on Si using atomic hydrogen as a surfactant
4. Hydrogen-Surfactant Mediated Growth of Ge on Si(001)
5. Hydrogen Segregation and Its Detrimental Effect in Epitaxial Growth of Ge Thin Film on Hydrogen-Terminated Si(001) Surface
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2. Formation of graphene atop a Si adlayer on the C-face of SiC;Physical Review Materials;2019-08-19
3. Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing;Surface Science;2019-05
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