Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4748172
Reference13 articles.
1. Growth and properties of the dilute bismide semiconductor GaAs1−xBix a complementary alloy to the dilute nitrides
2. GaBiAs: A material for optoelectronic terahertz devices
3. Electron Hall mobility in GaAsBi
4. Die Zustandsbilder Gallium—Wismut und Gallium—Quecksilber, Vergleich der Koexistenzkurven mit den Theorien der Entmischung
5. Molecular beam epitaxy growth of GaAs1−xBix
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