Nucleation and growth rate ofa‐Si alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93738
Reference12 articles.
1. Polycrystalline silicon by glow discharge technique
2. Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °C
3. Low‐temperature crystallization of dopeda‐Si:H alloys
4. Electroreflectance and Raman scattering investigation of glow-discharge amorphous Si:F:H
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