Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions-Reference-Cited by-同舟云学术

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Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

Published:2013-05 Issue:5 Volume:47 Page:606-611
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Tyschenko I. E.,Volodin V. A.,Voelskow M.,Cherkov A. G.,Popov V. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782613050229.pdf

Reference19 articles.

1. B. Yan, G. Yue, J. M. Owens, J. Yang, and S. Guha, Appl. Phys. Lett. 85, 1925 (2004).

2. R. Biswas and C. Xu, Opt. Express 19, A664 (2011).

3. B. Rech and H. Wagner, Appl. Phys. A 69, 155 (1999).

4. A. Chowdhury, S. Mukhopadhyay, and S. Ray, Solar Energy Mater. Solar Cells 93, 597 (2009).

5. S. Mukhopadhyay, R. Goswami, and S. Ray, Solar Energy Mater. Solar Cells 93, 674 (2009).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose;Semiconductors;2014-10

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