Research Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO2−x-Reference-Cited by-同舟云学术

Research Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO2−x

Published:2018-05 Issue:5 Volume:6 Page:058102
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Magyari-Köpe Blanka¹,Song Yali¹,Duncan Dan¹,Zhao Liang¹,Nishi Yoshio¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5032120

Reference60 articles.

1. Memory leads the way to better computing

2. Spectromicroscopic insights for rational design of redox-based memristive devices

3. B. Magyari-Köpe and Y. Nishi, Intelligent Integrated Systems: Devices, Technologies, and Architectures, edited by S. Deleonibus, Pan Stanford Series on Intelligent Nanosystems (CRC Press, 2014), p. 325.

4. Scaling limits of resistive memories

5. Resistive Random Access Memory (ReRAM) Based on Metal Oxides

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