Ab Initio Study of HfO2/Ti Interface VO/Oi Frenkel Pair Formation Barrier and VO Interaction With Filament
Author:
Affiliation:
1. Electrical Engineering Department, San Jose State University, San Jose, CA, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9864631/09828017.pdf?arnumber=9828017
Reference20 articles.
1. Research Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO2−x
2. Improved tangent estimate in the nudged elastic band method for finding minimum energy paths and saddle points
3. Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM
4. HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
5. HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study
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