Extrinsic Dopant Effects on Oxygen Vacancy Formation Energies in ZrO2 with Implication for Memristive Device Performance
Author:
Affiliation:
1. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, United States
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.8b00090
Reference58 articles.
1. The future of electronics based on memristive systems
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5. Resistive Switching
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