Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches-Reference-Cited by-同舟云学术

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Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

Published:2011-09-26 Issue:23 Volume:21 Page:4487-4492
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Menzel Stephan,Waters Matthias,Marchewka Astrid,Böttger Ulrich,Dittmann Regina,Waser Rainer

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201101117/fullpdf

Reference49 articles.

1. Memristive devices and systems

2. The missing memristor found

3. Nanoionics-based resistive switching memories

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

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