Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
Author:
Funder
Helmholtz-Gemeinschaft (Helmholtz Gemeinschaft)
Deutsche Forschungsgemeinschaft (German Research Foundation)
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-28992-9.pdf
Reference42 articles.
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3. Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nat. Mater. 6, 833–840 (2007).
4. Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-based resistive switching memories - nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632–2663 (2009).
5. Indiveri, G., Linn, E. & Ambrogio, S. Reram-based neuromorphic computing. In Ielmini, D. & Waser, R. (eds.) Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications (Wiley, 2016).
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