Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures-Reference-Cited by-同舟云学术

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

Published:2016-05-23 Issue:21 Volume:108 Page:212103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Sungjun¹^ORCID,Park Byung-Gook¹

Affiliation:

1. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, South Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4952719

Reference28 articles.

1. A New Programming Method to Alleviate the Program Speed Variation in Three-Dimensional Stacked Array NAND Flash Memory

2. A candidate Zr-doped Sb2Te alloy for phase change memory application

3. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

4. Time-dependent electroforming in NiO resistive switching devices

5. Tuning the resistive switching properties of TiO2−x films

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