Intrinsic electron traps in atomic-layer deposited HfO2 insulators-Reference-Cited by-同舟云学术

Intrinsic electron traps in atomic-layer deposited HfO2 insulators

Published:2016-05-30 Issue:22 Volume:108 Page:222901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cerbu F.¹^ORCID,Madia O.¹,Andreev D. V.¹²,Fadida S.³,Eizenberg M.³,Breuil L.⁴,Lisoni J. G.⁴⁵,Kittl J. A.¹⁶,Strand J.⁷,Shluger A. L.⁷,Afanas'ev V. V.¹^ORCID,Houssa M.¹,Stesmans A.¹

Affiliation:

1. Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven, Belgium

2. Bauman Moscow State Technical University—Kaluga Branch, 248000 Kaluga, Moscow obl., Russian Federation

3. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa, Israel

4. imec, 3001 Leuven, Belgium

5. Institute of Physics and Mathematics, Faculty of Science, Universidad Austral de Chile, Valdivia, Chile

6. Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, 78754 Texas, USA

7. Department of Physics and Astronomy, University College London, London WC1E 6BT, United Kingdom

Funder

EU Project Grant MORDRED

Engineering and Physical Sciences Research Council (EPSRC)

Fonds Wetenschappelijk Onderzoek (FWO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4952718

Reference36 articles.

1. Emerging Applications for High K Materials in VLSI Technology

2. High-K materials and metal gates for CMOS applications

3. Reliability of charge trapping memories with high-k control dielectrics (Invited Paper)

4. ${\rm HfO}_{2}$ Based High-$k$ Inter-Gate Dielectrics for Planar NAND Flash Memory

5. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

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