Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3666779
Reference15 articles.
1. Activation and diffusion studies of ion-implanted p and n dopants in germanium
2. Fermi-level pinning and charge neutrality level in germanium
3. High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
4. Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
5. Ohmic contact formation on n-type Ge
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