Characterization of structure and morphology of an advanced p-channel field effect transistor under uniaxial stress by synchrotron x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2734480
Reference6 articles.
1. In Search of “Forever,” Continued Transistor Scaling One New Material at a Time
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3. X-ray diffraction from low-dimensional structures
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