Probing nanoscale local lattice strains in advanced Si complementary metal-oxide-semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2336085
Reference18 articles.
1. Process‐induced mechanical stress in isolation structures studied by micro‐Raman spectroscopy
2. X‐ray diffraction topographs of silicon crystals with superposed oxide film. III. Intensity distribution
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