AlGaN/GaN heterojunction bipolar transistor structures-design considerations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373778
Reference51 articles.
1. GaN, AlN, and InN: A review
2. GaN: Processing, defects, and devices
3. High-temperature performance of AlGaN/GaN HFETs on SiC substrates
4. High-power 10-GHz operation of AlGaN HFET's on insulating SiC
5. Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHz
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1. The role of setback layers on the breakdown characteristics of AlGaAs/GaAs/GaN HBTs;physica status solidi (c);2008-05
2. Gain degradation mechanisms in wafer fused AlGaAs∕GaAs∕GaN heterojunction bipolar transistors;Applied Physics Letters;2007-08-06
3. DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion;IEEE Electron Device Letters;2007-01
4. n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION;International Journal of High Speed Electronics and Systems;2004-03
5. Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor;Applied Physics Letters;2003-02-03
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