Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices-Reference-Cited by-同舟云学术

Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

Author:

Lian Xiaojuan¹,Cartoixà Xavier¹,Miranda Enrique¹,Perniola Luca²,Rurali Riccardo³,Long Shibing⁴,Liu Ming⁴,Suñé Jordi¹

Affiliation:

1. Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain

2. CEA-LETI, MINATEC, Grenoble, France

3. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de Bellaterra, 08193 Bellaterra, Spain

4. Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Funder

the National Natural Science Foundation of China

the Spanish Ministry of Economy and Competitively

the DURSI of the Generalitat de Cataluny

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference45 articles.

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