Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy-Reference-Cited by-同舟云学术

Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy

Published:2009-09-15 Issue:6 Volume:106 Page:064103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Toyoda Satoshi,Takahashi Haruhiko,Kumigashira Hiroshi,Oshima Masaharu,Lee Dong-Ick,Sun Shiyu,Liu Zhi,Sun Yun,Pianetta Piero A.,Oshiyama Itaru,Tai Kaori,Fukuda Seiichi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3212979

Reference16 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies

3. Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

4. Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics

5. Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics

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