Electron irradiation of GaAs: Improvement of transport properties and observation ofDX‐like centers at ambient pressure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354402
Reference30 articles.
1. Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAs
2. Effects of neutron and electron irradiation on the absorption edge of GaAs
3. Electrical Studies of Low‐Temperature Neutron‐ and Electron‐Irradiated Epitaxial n‐Type GaAs
4. Annealing of Electron-Irradiated GaAs
5. Defect production in electron‐irradiated,n‐type GaAs
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1. 150 KeV proton irradiation effects on photoluminescence of GaInAsN bulk and quantum well structures;Optical Materials;2019-11
2. Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers;Journal of Luminescence;2013-04
3. Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation;Semiconductor Science and Technology;2013-01-17
4. Effect of 60Co γ-ray irradiation on electrical properties of GaAs epilayer and GaAs p–i–n diode;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-02
5. Influence of high energy particle radiation on GaAs/AlGaAs quantum well infrared photodetectors;Semiconductor Science and Technology;1997-08-01
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