Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature-Reference-Cited by-同舟云学术

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Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

Published:2013-10-14 Issue:16 Volume:103 Page:163504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhu C. Y.,Zhang F.,Ferreyra R. A.,Avrutin V.,Özgür Ü.,Morkoç H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4826324

Reference14 articles.

1. Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

2. Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

3. Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

4. Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature;IEEE Transactions on Electron Devices;2022-03

2. Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs;2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD);2020-09

3. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19

4. Breakdown mechanisms in AlGaN/GaN HEMTs: An overview;Japanese Journal of Applied Physics;2014-09-03

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