Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3678041
Reference9 articles.
1. A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors
2. Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors
3. Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing
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