Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress-Reference-Cited by-同舟云学术

Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

Published:2010-07-12 Issue:2 Volume:97 Page:023503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ťapajna M.,Mishra U. K.,Kuball M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3460529

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