Influence of partial dopant ionization on the capacitance–voltage profiles of delta-doped structures-Reference-Cited by-同舟云学术

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Influence of partial dopant ionization on the capacitance–voltage profiles of delta-doped structures

Published:1998-06-29 Issue:26 Volume:72 Page:3491-3493
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Moon C. R.,Kwon S. D.,Lim H.,Choe Byung-Doo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.121676

Reference6 articles.

1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs

2. δ‐doped AlGaAs and AlGaAs/InGaAs high electron mobility transistor structures grown by metalorganic chemical vapor deposition

3. Spatial resolution of the capacitance‐voltage profiling technique on semiconductors with quantum confinement

4. A self‐consistent solution of Schrödinger–Poisson equations using a nonuniform mesh

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of delta-doped GaAs grown by molecular beam epitaxy;2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567)

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