δ‐doped AlGaAs and AlGaAs/InGaAs high electron mobility transistor structures grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107003
Reference11 articles.
1. Delta doping of III–V compound semiconductors: Fundamentals and device applications
2. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs
3. W-band InGaAs HEMT low noise amplifiers
4. Spatial distribution of impurities in delta-doped n-type GaAs
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3. MOVPE technology and characterisation of silicon δ-doped GaAs and AlxGa1−xAs;Thin Solid Films;2002-06
4. Epitaxial Growth and Characterisation of Silicon Delta-Doped GaAs, AlAs and Alx Ga1-xAs;Crystal Research and Technology;2001-10
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