W-band InGaAs HEMT low noise amplifiers-Reference-Cited by-同舟云学术

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W-band InGaAs HEMT low noise amplifiers

Published:1990 Issue: Volume: Page:
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Container-title:IEEE International Digest on Microwave Symposium
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Author:

Duh K.H.G.,Chao P.C.,Ho P.,Tessmer A.,Liu S.M.J.,Kao M.Y.,Smith P.M.,Ballingall J.M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/133/3145/00099650.pdf?arnumber=99650

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Two-Dimensional Electron Gas Formation in InGaAs-Based HEMTs;Advances in Science, Technology and Engineering Systems Journal;2020

2. Drain Charactersitic Analysis of High Electron Mobility Transistor (Moshemt);SSRN Electronic Journal;2019

3. Narrow-beam azimuthally omni-directional millimetre-wave antenna using freeformed cylindrical woodpile cavity;IET Microwaves, Antennas & Propagation;2010

4. Halbleiter, Halbleiterbauelemente und Elektronenröhren;Springer-Lehrbuch;1999

5. The evolution of packages for monolithic microwave and millimeter-wave circuits;IEEE Transactions on Antennas and Propagation;1995

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