Effect of metal intermixing on the Schottky barriers of Mo(100)/GaAs(100) interfaces-Reference-Cited by-同舟云学术

Effect of metal intermixing on the Schottky barriers of Mo(100)/GaAs(100) interfaces

Published:2014-11-21 Issue:19 Volume:116 Page:193703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hepplestone S. P.¹^ORCID,Sushko P. V.²

Affiliation:

1. Department of Physics and Astronomy, University College London, Gower Street, London, WC1E 6BT, United Kingdom

2. Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, Gower Street, London, WC1E 6BT, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Royal Society

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/jap/116/19/1.4902009.pdf?itemId=/content/aip/journal/jap/116/19/10.1063/1.4902009&mimeType=pdf&containerItemId=content/aip/journal/jap

Reference27 articles.

1. InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies

2. Mechanisms of current flow in metal-semiconductor ohmic contacts

3. Ultralow resistance in situ Ohmic contacts to InGaAs/InP

4. A survey of ohmic contacts to III-V compound semiconductors

5. Nanometre-scale electronics with III–V compound semiconductors

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