Ultralow resistance in situ Ohmic contacts to InGaAs/InP-Reference-Cited by-同舟云学术

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Ultralow resistance in situ Ohmic contacts to InGaAs/InP

Published:2008-11-03 Issue:18 Volume:93 Page:183502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Singisetti Uttam,Wistey Mark A.,Zimmerman Jeramy D.,Thibeault Brian J.,Rodwell Mark J. W.,Gossard Arthur C.,Bank Seth R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3013572

Reference10 articles.

1. InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies

2. Proceedings of the 20th IEEE International Conference on Indium Phosphide and Related Material;Rodwell M. J.,2008

3. A controllable mechanism of forming extremely low‐resistance nonalloyed ohmic contacts to group III‐V compound semiconductors

4. Low resistance, nonalloyed Ohmic contacts to InGaAs

5. Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded InxGa1-xAs Layers

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1. Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain;Journal of Applied Physics;2024-04-09

2. Toward sub-micron pixels for short-wave infrared imaging;Semiconductor Science and Technology;2022-12-29

3. CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate;IEEE Transactions on Electron Devices;2021-12

4. Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts;Advanced Functional Materials;2021-02-24

5. Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing*;Chinese Physics B;2021-02-01

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