Stripe-width dependence of threshold current for gain-guided AlGaInN laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123084
Reference12 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
3. InGaN/GaN/AIGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 Hours
4. InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices
5. Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
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1. Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells;Semiconductor Science and Technology;2018-02-20
2. Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture;Applied Physics Express;2015-03-06
3. GaN Nanostructure-Based Light Emitting Diodes and Semiconductor Lasers;Journal of Nanoscience and Nanotechnology;2014-02-01
4. Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers;Applied Physics Letters;2009-05-11
5. Ridge-width dependence on high-temperature continuous-wave operation of native oxide-confined InGaAsN triple-quantum-well lasers;IEEE Photonics Technology Letters;2006-03
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