InGaN/GaN/AIGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 Hours

Abstract

The following article, originally published in Materials Research Society Proceedings Volume 482, is based on the address that Shuji Nakamura, recipient of an MRS Medal Award, presented during Symposium X of the 1997 MRS Fall Meeting. Nakamura was recognized for “the development of lattice-mismatched GaN based heteroepitaxy and its application to the creation of blue and green light-emitting diodes and short wave-length laser diodes.”