Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4747797
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3. Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride;ECS Journal of Solid State Science and Technology;2017
4. Arsenic related defect states resonant with the semiconductor conduction band at the In0.53Ga0.47As/oxide interface: A density functional study;Microelectronic Engineering;2015-11
5. Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study;Advances in Condensed Matter Physics;2014
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