Stretchable ferroelectric nanoribbon and the mechanical stability of its domain structures-Reference-Cited by-同舟云学术

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Stretchable ferroelectric nanoribbon and the mechanical stability of its domain structures

Published:2018-08-06 Issue:6 Volume:113 Page:062901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Yun¹²^ORCID,Yu Jing¹²,Xiong Liqun¹²,Xiong Weiming¹²,Zhang Xiaoyue¹²³,Zheng Yue¹²

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

2. Micro & Nano Physics and Mechanics Research Laboratory, School of Physics, Sun Yat-sen University, Guangzhou 510275, China

3. Sino-French Institute of Nuclear Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China

Funder

National Natural Science Foundation of China

Guangzhou Science and Technology Program key projects

Natural Science Foundation of Guangdong Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5037213

Reference37 articles.

1. Inside story of ferroelectric memories

2. A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction

3. FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell

4. Speed up Ferroelectric Organic Transistor Memories by Using Two-Dimensional Molecular Crystalline Semiconductors

5. Applications of Modern Ferroelectrics

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1. Artificial Neuron Devices;Chemical Reviews;2023-11-17

2. Stretchable ferroelectric field-effect-transistor with multi-level storage capacity and photo-modulated resistance;Applied Physics Letters;2019-10-07

3. Strong Polarity Asymmetry and Abnormal Mechanical Electroresistance Effect in the Organic Monolayer Tunnel Junction;ACS Applied Electronic Materials;2019-05-22

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