Stretchable ferroelectric field-effect-transistor with multi-level storage capacity and photo-modulated resistance
Author:
Affiliation:
1. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
2. Micro & Nano Physics and Mechanics Research Laboratory, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
Funder
Guangzhou Science and Technology Program key projects
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5111027
Reference39 articles.
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