Process-dependent reconfigurability in a gradient ferroelectric field-effect transistor

Abstract

In this paper, we demonstrate reconfigurable ferroelectric field-effect transistors (Fe-FETs) exhibiting process dependence based on poly(vinylidene fluoride-trifluoroethylene)/molybdenum telluride[P(VDF-TrFE)/MoTe2] heterostructures. By introducing a thickness gradient to a ferroelectric polymer, we constructed a gradient distribution of coercive voltage. This enables programmable configuration of the device (n–p, p–n, p–p, or n–n) depending on the input voltage sequence. Our Fe-FETs exhibit multilevel storage capacity and logic ability, including an on/off ratio of 106, an adjustable rectification ratio from 1 to 45, and a reversible rectification direction. The use of such a structure-gradient design in an Fe-FET provides a valuable strategy for realizing process-dependent reconfigurability and the creation of intelligent devices.