High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers-Reference-Cited by-同舟云学术

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High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers

Published:2009-04-13 Issue:15 Volume:94 Page:152109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Oyama Kazuihiro,Ri Sung-Gi,Kato Hiromitsu,Ogura Masahiko,Makino Toshiharu,Takeuchi Daisuke,Tokuda Norio,Okushi Hideyo,Yamasaki Satoshi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3120560

Reference13 articles.

1. Electron Affinity of the Bare and Hydrogen Covered Single Crystal Diamond (111) Surface

2. Characteristics of excitonic emission in diamond

3. Ultraviolet Emission from a Diamond pn Junction

4. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

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3. Fabrication and characterization of diamond (100) p+-i-n+ diodes with heavily nitrogen-doped films;Diamond and Related Materials;2024-05

4. Single-crystal diamond growth by hot-filament CVD: a recent advances for doping, growth rate and defect controls;Functional Diamond;2023-09-29

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