More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H−)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4791675
Reference22 articles.
1. Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors
2. Characteristics of InGaAs quantum dot infrared photodetectors
3. Quantum-dot infrared photodetectors: Status and outlook
4. Characteristics of a multicolor InGaAs-GaAs quantum-dot infrared photodetector
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