Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN-Reference-Cited by-同舟云学术

Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

Published:2016-05-28 Issue:20 Volume:119 Page:205109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lee In-Hwan¹,Polyakov A. Y.²,Smirnov N. B.²³,Yakimov E. B.²⁴^ORCID,Tarelkin S. A.²⁵,Turutin A. V.²,Shemerov I. V.²,Pearton S. J.⁶^ORCID

Affiliation:

1. School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, South Korea

2. National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049, Russia

3. Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017, Russia

4. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432, Russia

5. Technological Institute for Superhard and Novel Carbon Materials, 7 Centralnaya St., Troitsk, Moscow 142190, Russia

6. University of Florida, Gainesville, Florida 32611, USA

Funder

Defense Threat Reduction Agency (DTRA)

Ministry of Education and Science of the Russian Federation

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4952734