Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors

Published:2011-11-28 Issue:22 Volume:99 Page:223506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gao Feng,Lu Bin,Li Libing,Kaun Stephen,Speck James S.,Thompson Carl. V.,Palacios Tomás

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3665065

Reference21 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

3. GaN HEMT reliability

4. AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

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1. On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices;Journal of Applied Physics;2024-01-10

2. Assessment of T-Gate and Π-Gate HEMT Through Cellular Monte Carlo Simulations;IEEE Transactions on Electron Devices;2023-12

3. Voltage-margin limiting mechanisms of AlScN-based HEMTs;Applied Physics Letters;2023-07-17

4. An Experimental Study of Dislocation Dynamics in GaN;Micromachines;2023-06-02

5. Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs;Materials Science in Semiconductor Processing;2022-01

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