Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4882715
Reference33 articles.
1. Bulk GaN crystals grown by HVPE
2. HYDRIDE VAPOR PHASE EPITAXY OF GROUP III NITRIDE MATERIALS
3. Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE
4. Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire
5. Preparation of 3 inch freestanding GaN substrates by hydride vapor phase epitaxy with void-assisted separation
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