Single‐crystalline aluminum layer buried in α‐Al2O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103265
Reference11 articles.
1. New trends in SIMOX
2. Recrystallization‐driven migration of implanted ions in sapphire and resultant‐oriented precipitation
3. Metallic alloy precipitates in high dose indium implanted MgO
4. Ion beam effects on small metallic precipitates (Na) buried in an insulating material (MgO)
5. Aggregation of ion-implanted silver in magnesium oxide single crystals
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1. Aluminum and aluminum nitride formation in sapphire by ion beam synthesis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05
2. Synthesis of single-crystalline Al layers in sapphire;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
3. Observation of adsorption and reaction of NH3 on crystalline Al2O3 under steady-state conditions using external-reflection infrared spectroscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-07
4. High-fluence ion implantation of In into Al crystals: Formation and evolution of buried layers;Philosophical Magazine A;1998-02
5. Atomic Structure of theα−Al2O3(0001) (31×31)R±9°Reconstruction;Physical Review Letters;1994-09-26
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