Synthesis of single-crystalline Al layers in sapphire

Author:

Schlosser W,Lindner J.K.N,Zeitler M,Stritzker B

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications

2. A. Vantomme, M.F. Wu, S. Hogg, U. Wahl, W. Deweerd, H. Pattyn, G. Langouche, S. Jin, H. Bender, these proceedings (E-MRS98 Symp. J), Nucl. Instr. and Meth. B 147 (1999) 261; J.K.N. Lindner, B. Stritzker, these proceedings (E-MRS98 Symp. J), Nucl. Instr. and Meth. B 147 (1999) 249

3. Modification of single-crystal sapphire by ion implantation

4. E. Alves, R.C. Silva, M.F. da Silva, J.C. Soares, these proceedings (E-MRS98 Symp. J), Nucl. Instr. and Meth. B 147 (1999) 226

5. Single‐crystalline aluminum layer buried in α‐Al2O3

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Aluminum and aluminum nitride formation in sapphire by ion beam synthesis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05

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