Effects of strain and composition on the lattice parameters and applicability of Vegard’s rule in Al-rich Al1−xInxN films grown on sapphire
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2924426
Reference30 articles.
1. Recent developments in the III-nitride materials
2. Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
3. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
4. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)
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