Elimination of oval defects in epilayers by using chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95770
Reference9 articles.
1. On the origin and elimination of macroscopic defects in MBE films
2. Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy
3. Microtwinning and growth defects in GaAs MBE layers
4. Volatile metal‐oxide incorporation in layers of GaAs, Ga1−xAlxAs and related compounds grown by molecular beam epitaxy
5. Summary Abstract: The MBE growth of GaAs free of oval defects
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