Effects of ion‐beam mixing on the epitaxial growth of MoSi2on (111)Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339255
Reference16 articles.
1. Refractory metal silicide formation by ion beam mixing and rapid thermal annealing
2. Refractory metal silicides: Thin-film properties and processing technology
3. Double heteroepitaxy in the Si (111)/CoSi2/Si structure
4. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
5. Epitaxial Growth of Transition Metal Silicides on Silicon
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ion beam induced surface and interface engineering;Surface Science Reports;2011-03
2. Swift heavy ion induced effects at Mo/Si interface and silicide formation;Surface and Interface Analysis;2009-09
3. Formation and microstructural development of TiSi2 in (111)Si by Ti ion implantation and annealing at 950 °C;Journal of Materials Research;1995-04
4. Epitaxial growth of transition-metal silicides on silicon;Materials Science Reports;1991-03
5. Low‐temperature ion mixing of yttrium and silicon;Journal of Applied Physics;1990-02
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