Low‐temperature ion mixing of yttrium and silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345678
Reference25 articles.
1. Epitaxial yttrium silicide on (111) silicon by vacuum annealing
2. Contact reaction between Si and rare earth metals
3. Epitaxial growth of rare‐earth silicides on (111) Si
4. Thin films of rare earth metal silicides
5. Diffusion in Collision Cascades: a Thermodynamic Viewpoint
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural study of YSi[sub 1.7] layers formed by channeled ion beam synthesis;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
2. Formation and kinetics of ion‐induced yttrium silicide layers;Journal of Applied Physics;1995-02
3. Silicon ion bombardment of Sb/Si contacts;Surface and Interface Analysis;1992-06
4. The dependence of low‐temperature ion mixing of Y/Si bilayers on nuclear energy deposition;Journal of Applied Physics;1991-06
5. Ion‐induced formation of stable and metastable phases in the Y‐Si system;Applied Physics Letters;1991-04-29
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