Conductance study of silicon nitride/InP capacitors with an In2S3interface control layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111643
Reference8 articles.
1. Control of compound semiconductor–insulator interfaces by an ultrathin molecular-beam epitaxy Si layer
2. Gate quality Si3N4/Si/n‐In0.53Ga0.47As metal‐insulator‐semiconductor capacitors
3. Sulfur as a surface passivation for InP
4. Fabrication of novel self-aligned metal insulator semiconductor field effect transistors (MISFETs) on InP by a S interface engineering technique
5. Passivation of the InP surface using polysulfide and silicon nitride overlayer
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1. Reversible metallization and carrier transport behavior of In2S3 under high pressure;AIP Advances;2018-11
2. Investigation on morphological properties of In2S3 by high pressure x-ray diffraction;Materials Research Express;2017-08-03
3. Microstructural and electrical property studies of Pb(Zr0.52Ti0.48)O3 films grown on p-InP (100) substrates by a radio-frequency magnetron-sputtering technique at low temperature;Journal of Materials Research;2000-01
4. Microstructural, electrical, and transmittance properties of PbTiO3 films grown on p-InP (100) substrates at low temperature;Journal of Physics and Chemistry of Solids;1999-07
5. Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method;Journal of Applied Physics;1998-01
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