Microstructural, electrical, and transmittance properties of PbTiO3 films grown on p-InP (100) substrates at low temperature-Reference-Cited by-同舟云学术

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Microstructural, electrical, and transmittance properties of PbTiO3 films grown on p-InP (100) substrates at low temperature

Published:1999-07 Issue:7 Volume:60 Page:935-942
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Kim T.W,Yom S.S

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference19 articles.

1. Physics and Chemistry of III–V Compound Semiconductor Interfaces;Wilmsen,1985

2. Physics of Quantum Electron Devices;Capasso,1990

3. Conductance study of silicon nitride/InP capacitors with an In2S3interface control layer

4. Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs

5. Strain effects in lattice-mismatched InxGa1−xAs/InyAl1−yAs coupled double quantum wells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferroelectric PbTiO3Films Grown by Pulsed Liquid Injection Metalorganic Chemical Vapour Deposition;Ferroelectrics;2007-05-18

2. Atomic layer deposition and post-deposition annealing of PbTiO3 thin films;Thin Solid Films;2006-02

3. Characterization of Highly-Oriented Ferroelectric PbxBa1−x TiO3 Thin Films Grown by Metalorganic Chemical Vapor Deposition;Journal of Materials Research;2005-11

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